SV51008
2014.01.10
DQS Postamble Circuitry
7-21
There are four delay elements in the DQS delay chain that have the same characteristics:
? Delay elements in the DQS logic block
? Delay elements in the DLL
The first delay chain closest to the DQS/CQ pin is shifted either by the DQS delay settings or by the sum of
the DQS delay setting and the phase-offset setting. The DQS delay settings can come from the DQS phase-
shift circuitry on either end of the I/O banks or from the logic array.
The number of delay chains required is transparent because the UniPHY IP automatically sets it when you
choose the operating frequency.
In Stratix V devices, if you do not use the DLL to control the DQS delay chains, you can input your own
gray-coded 7 bit settings using the delayctrlin[6..0] signals available in the UniPHY IP. These settings
control 1, 2, 3, or all 4 delay elements in the DQS delay chains. The UniPHY megafunction can also
dynamically choose the number of DQS delay chains required for the system. The amount of delay is equal
to the sum of the intrinsic delay of the delay element and the product of the number of delay steps and the
value of the delay steps. You can also bypass the DQS delay chain to achieve a 0° phase shift.
Related Information
Provides more information about programming the delay chains.
? Delay Chains on page 7-26
DQS Postamble Circuitry
There are preamble and postamble specifications for both read and write operations in DDR3 and DDR2
SDRAM. The DQS postamble circuitry ensures that data is not lost if there is noise on the DQS line during
the end of a read operation that occurs while DQS is in a postamble state.
The Stratix V devices contain dedicated postamble registers that you can control to ground the shifted DQS
signal that is used to clock the DQ input registers at the end of a read operation. This function ensures that
any glitches on the DQS input signal during the end of a read operation and occurring while DQS is in a
postamble state do not affect the DQ IOE registers.
? For preamble state, the DQS is low, just after a high-impedance state.
? For postamble state, the DQS is low, just before it returns to a high-impedance state.
For external memory interfaces that use a bidirectional read strobe (DDR3 and DDR2 SDRAM), the DQS
signal is low before going to or coming from a high-impedance state.
Half Data Rate Block
The Stratix V devices contain a half data rate (HDR) block in the postamble enable circuitry.
The HDR block is clocked by the half-rate resynchronization clock, which is the output of the I/O clock
divider circuit. There is an AND gate after the postamble register outputs to avoid postamble glitches from
a previous read burst on a non-consecutive read burst. This scheme allows half-a-clock cycle latency for
dqsenable assertion and zero latency for dqsenable deassertion.
Using the HDR block as the first stage capture register in the postamble enable circuitry block is optional.
Altera recommends using these registers if the controller is running at half the frequency of the I/Os.
External Memory Interfaces in Stratix V Devices
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